b29w800a/811 1/4 complete data available on data-on-disc cd-rom or at www.st.com m29w800at M29W800AB 8 mbit (1mb x8 or 512kb x16, block erase) low voltage single supply flash memory data briefing 2.7v to 3.6v supply voltage for program, erase and read operations fast access time: 80ns fast programming time: 10 m s typical program/erase controller (p/e.c.) program byte-by-byte or word-by-word status register bits and ready/busy output security protection memory area memory blocks boot block (top or bottom location) parameter and main blocks block, multi-block and chip erase multi block protection/temporary unprotection modes erase suspend and resume modes read and program another block during erase suspend low power consumption stand-by and automatic stand-by 100,000 program/erase cycles per block 20 years data retention defectivity below 1ppm/year electronic signature manufacturer code: 0020h device code, m29w800at: 00d7h device code, M29W800AB: 005bh description the m29w800a is a non-volatilememory that may be erased electrically at the block or chip level and programmed in-system on a byte-by-byteor word- by-word basis using only a single 2.7v to 3.6v v cc supply. for program and erase operations the necessary high voltages are generated internally. the device can also be programmed in standard programmers. the array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. blocks can be protected against pro- graming and erase on programming equipment, and temporarily unprotected to make changes in the application. each block can be programmed and erased over 100,000 cycles. ai02599 19 a0-a18 w dq0-dq14 v cc m29w800at M29W800AB e v ss 15 g rp dq15a1 byte rb logic diagram 44 1 so44 (m) tsop48 (n) 12 x 20 mm bga fbga48 (za) 8 x 6 solder balls
2/4 a0-a18 address inputs dq0-dq7 data input/outputs, command inputs dq8-dq14 data input/outputs dq15a1 data input/output or address input e chip enable g output enable w write enable rp reset / block temporary unprotect rb ready/busy output byte byte/word organisation v cc supply voltage v ss ground signal names dq3 dq9 dq2 a6 dq0 w a3 rb dq6 a8 a9 dq13 a17 a10 dq14 a2 dq12 dq10 dq15a1 v cc dq4 dq5 a7 dq7 nc nc ai02179 m29w800t m29w800b (normal) 12 1 13 24 25 36 37 48 dq8 nc nc a1 a18 a4 a5 dq1 dq11 g a12 a13 a16 a11 byte a15 a14 v ss e a0 rp v ss tsop pin connections g dq0 dq8 a3 a0 e v ss a2 a1 a13 v ss a14 a15 dq7 a12 a16 byte dq15a1 dq5 dq2 dq3 v cc dq11 dq4 dq14 a9 w rb a4 rp a7 ai02181 m29w800t m29w800b 8 2 3 4 5 6 7 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 20 19 18 17 dq1 dq9 a6 a5 dq6 dq13 44 39 38 37 36 35 34 33 a11 a10 dq10 21 dq12 40 43 1 42 41 a17 a8 a18 so pin connections warning: nc = not connected. m29w800at, M29W800AB dq3 dq9 dq2 dq0 dq6 dq13 dq14 dq12 dq10 dq15a1 v cc dq4 dq5 dq7 ai02180 m29w800t m29w800b (reverse) 12 1 13 24 25 36 37 48 dq8 dq1 dq11 a16 byte v ss a0 v ss a6 a3 a8 a9 a17 a10 a2 a7 nc nc nc nc a1 a18 a4 a5 a12 a13 a11 a15 a14 rp w rb g e tsop reverse pin connections warning: nc = not connected.
ai00656 d e f 8 7 6 5 4 3 2 1 b c a v ss dq15 a1 a15 a14 a12 a13 dq3 dq11 dq10 a18 nc rb dq1 dq9 dq8 dq0 a6 a17 a7 g e a0 a4 a3 dq2 dq6 dq13 dq14 a10 a8 a9 dq4 v cc dq12 dq5 nc nc rp w a11 dq7 a1 a2 v ss a5 nc a16 byte fbga package ball out (top view) warning: nc = not connected. 3/4 40/36 m29w800at, M29W800AB
4/4 m29w800at, M29W800AB ordering information scheme devices are shipped from the factory with the memory content erased (to ffffh). for a list of available options (speed, package, etc...) or for further informationon any aspect of this device, please contact the stmicroelectronics sales office nearest to you. operating voltage w 2.7v to 3.6v array matrix t top boot b bottom boot speed 80 80ns 90 90ns 100 100ns 120 120ns package n tsop48 12 x 20mm m so44 za fgba48 0.8mm ball pitch option r reverse pinout t tape & reel packing temp. range 1 0 to 70 c 5 20 to 85 c 6 40 to 85 c example: m29w800at 80 n 1 t
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